IRGMH40F insulated gate bipolar transistor e c g n-channel features v ces = 1200v v ce(on) max = 3.6v @v ge = 15v, i c = 13a parameter max. units v ces collector-to-emitter breakdown voltage 1200 v i c @ t c = 25c continuous collector current 13 i c @ t c = 100c continuous collector current 48 a i cm pulsed collector current ? ? ? ? ? 24 i lm clamped inductive load current ? ? ? ? ? 48 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 96 w p d @ t c = 100c maximum power dissipation 36 t j operating junction and -55 to + 150 t stg storage temperature range c lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g absolute maximum ratings 02/20/02 www.irf.com 1 fast speed igbt electrically isolated and hermetically sealed simple drive requirements latch-proof fast speed operation 3 khz - 8 khz high operating frequency switching-loss rating includes all "tail" losses insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high-current applications. to-254aa thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.3 r thcs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 48 c/w pd -91418b the performance of various igbts varies greatly with frequency. note that ir now provides the designer with a speed benchmark (f ic/2 , or the "half-current frequency "), as well as an indication of the current handling capability of the device. description for footnotes refer to the last page
2 www.irf.com IRGMH40F parameter min. typ. max. units conditions q g total gate charge (turn-on) ??? 56 84 i c = 13a q ge gate - emitter charge (turn-on) ??? 12 18 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ??? 20 30 v ge = 15v t d(on) turn-on delay time ??? 25 ??? i c = 13a, v cc = 960v t r rise time ??? 14 ??? energy losses include "tail" t d(off) turn-off delay time ??? 270 ??? see fig. 9, 10, 14 t f fall time ??? 270 ??? e on turn-on switching loss ??? 0.5 ??? e off turn-off switching loss ??? 2.6 ??? e ts total switching loss ??? 3.1 4.7 t d(on) turn-on delay time ??? 25 ??? t j = 125c t r rise time ??? 14 ??? i c = 13a, v cc = 960v t d(off) turn-off delay time ??? 450 ??? v ge = 15v, r g = 10 ? t f fall time ??? 650 ??? energy losses include "tail" e ts total switching loss ??? 7.5 ??? see fig. 11, 14 l c +l e total inductance ??? 6.8 ??? nh measured from collector lead (6mm/ 0.25in. from package) to emitter lead (6mm / 0.25in. from package) c ies input capacitance ??? 1400 ??? v ge = 0v c oes output capacitance ??? 82 ??? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ??? 17 ??? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ??? ??? v v ge = 0v, i c = 250 a v (br)ecs emitter-to-collector breakdown voltage 17 ??? ??? v v ge = 0v, i c = 1.0 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 1.1 ??? v/ cv ge = 0v, i c = 1.0 ma ??? 2.4 3.6 i c = 13a v ge = 15v v ce(on) collector-to-emitter saturation voltage ??? 3.1 ??? i c = 24a see fig.2, 5 ??? 2.6 ??? i c = 13a , t j = 125 c v ge(th) gate threshold voltage 3.0 ??? 5.5 v ce = v ge , i c = 250 a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -11 ??? mv/ cv ce = v ge , i c = 250 a g fe forward transconductance 5.0 ??? ??? sv ce 15v, i c = 13a ??? ??? 100 v ge = 0v, v ce = 960v ??? ??? 1200 v ge = 0v, v ce = 960v, t j = 125 c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current a switching characteristics @ t j = 25c (unless otherwise specified) v ? ? ? ? ? ns mj ns mj for footnotes refer to the last page note: corresponding spice and saber models are available on the website.
www.irf.com 3 IRGMH40F fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0 5 10 15 20 25 30 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated volta ge ideal diodes square wave: for both: duty cycle: 50% t = 125 c t = 9 0 c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 23w 0.1 1 10 100 1000 1 10 100 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e (v) a 20 s pulse width t = 25 c c 6.0v vgs top 20v 15v 10v 7.0v bottom 6.0v 0.1 1 10 100 1000 1 10 100 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e ( v ) a 6.0v 20s pulse width t = 150 c vgs top 20v 15v 10v 7.0v bottom 6.0v c
4 www.irf.com IRGMH40F fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 c ce v , c ollector-to-em itter voltage (v) v = 15v 80s pulse w idth ge t , case temperature ( c) a i = 26a i = 13 a i = 6.5a c c c 0 4 8 12 16 20 24 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature ( c) c v = 15v ge a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectan g ular pulse duration ( sec ) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single p u ls e ( thermal response ) a thermal response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
www.irf.com 5 IRGMH40F fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 3.0 3.1 3.2 3.3 3.4 0 102030405060 g total switching losses (m j) r , gate resistance ( ? ) a v = 9 6 0v v = 1 5 v t = 2 5 c i = 13 a cc ge c c 0 500 1000 1500 2000 2500 1 10 100 ce c, capacitance (pf) v , collector-to-emitter volta g e ( v ) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 102030405060 ge v , gate-to-em itter voltage (v) g q , total g ate char g e ( nc ) a v = 4 0 0v i = 13 a ce c 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 c t , case temperature ( c) total switching losses (mj) a r = 10 ? v = 15v v = 960v i = 13a i = 6.5a i = 26a g ge cc c c c
6 www.irf.com IRGMH40F fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0 4 8 12 16 20 6 101418222630 c total switching losses (mj) i , collector-to-emitter current ( a ) a r = 10 ? t = 150 c v = 960v v = 15v g c cc ge 1 10 100 1 10 100 1000 1000 0 c ce i , collector-to-em itter current (a ) safe operating area v = 20v t = 125 c ge j v , collector-to-emitter volta g e (v) a 125 c
www.irf.com 7 IRGMH40F 960v 4 x i c @ 25 c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 960v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 960v
8 www.irf.com IRGMH40F case outline and dimensions ? to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/02 notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 10 ? pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x b 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 17.40 [.685] 16.89 [.665] 3.81 [.150] 0.84 [.033] max. c 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x 4.06 [.160] 3.56 [.140] b r 1.52 [.060] 123 4.82 [.190] 3.81 [.150] 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] not e s : 1. dimens ioning & t ole rancing per as me y14.5m-1994. 2. al l dime ns ions ar e s h own in mil l ime t e r s [inche s ]. 3. cont rolling dimens ion: inch. 4. conforms to jedec outline to-254aa. caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. legend 1 = collector 2 = emitter 3 = gate
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